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ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
October 2004
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V5036S3ST, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the DPak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external components. EcoSPARKTM devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Formerly Developmental Type 49443
Applications
* Automotive Ignition Coil Driver Circuits * Coil-On Plug Applications
Features
* Industry Standard D2-Pak package * SCIS Energy = 500mJ at TJ = 25oC * Logic Level Gate Drive
Package
JEDEC TO-263AB D-Pak JEDEC TO-220AB EC JEDEC TO-262AA G
Symbol
COLLECTOR
EC
G
GATE
R1
G
R2
E
EMITTER
COLLECTOR (FLANGE)
COLLECTOR (FLANGE)
Device Maximum Ratings TA = 25C unless otherwise noted
Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) At Starting TJ = 25C, ISCIS = 38.5A, L = 670 Hy At Starting TJ = 150C, ISCIS = 30A, L = 670 Hy Collector Current Continuous, At TC = 25C, See Fig 9 Collector Current Continuous, At TC = 110C, See Fig 9 Gate to Emitter Voltage Continuous Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500 Ratings 390 24 500 300 46 31 10 250 1.67 -40 to 175 -40 to 175 300 260 4 Units V V mJ mJ A A V W W/C C C C C kV
(c)2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
Package Marking and Ordering Information
Device Marking V5036S V5036P V5036S Device ISL9V5036S3ST ISL9V5036P3 ISL9V5036S3 Package TO-263AB TO-220AA TO-262AA Reel Size 330mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 50 50
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C IC = -75mA, VGE = 0V, TC = 25C IGES = 2mA VCER = 250V, RG = 1K, See Fig. 11 TC = 25C TC = 150C 330 360 390 V
BVCES
Collector to Emitter Breakdown Voltage
360
390
420
V
BVECS BVGES ICER
Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current
30 12 10K
14 75 -
25 1 1 40 30K
V V A mA mA mA
IECS R1 R2
Emitter to Collector Leakage Current Series Gate Resistance Gate to Emitter Resistance
VEC = 24V, See TC = 25C Fig. 11 TC = 150C
On State Characteristics
VCE(SAT) VCE(SAT) Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.0V IC = 15A, VGE = 4.5V TC = 25C, See Fig. 4 TC = 150C 1.17 1.50 1.60 1.80 V V
Dynamic Characteristics
QG(ON) VGE(TH) Gate Charge Gate to Emitter Threshold Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 IC = 10A, TC = 25C TC = 150C VCE = 12V 1.3 0.75 32 3.0 2.2 1.8 nC V V V
VGEP
Gate to Emitter Plateau Voltage
Switching Characteristics
td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 VCE = 300V, L = 2mH, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 TJ = 25C, L = 670 H, RG = 1K, VGE = 5V, See Fig. 1 & 2 0.7 2.1 10.8 2.8 4 7 15 15 500 s s s s mJ
Thermal Characteristics
RJC Thermal Resistance Junction-Case TO-263, TO-220, TO-262 0.6 C/W
(c)2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
Typical Characteristics
ISCIS, INDUCTIVE SWITCHING CURRENT (A) RG = 1K, VGE = 5V,Vdd = 14V 40 35 30 25 20 15 10 5 SCIS Curves valid for Vclamp Voltages of <390V 0 0 50 100 150 200 250 300 350 TJ = 150C TJ = 25C ISCIS, INDUCTIVE SWITCHING CURRENT (A) 45 45 40 35 30 25 20 TJ = 25C 15 TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 0 0 2 4 6 8 10 tCLP, TIME IN CLAMP (S) L, INDUCTANCE (mHy) RG = 1K, VGE = 5V,Vdd = 14V
Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.10 ICE = 6A 1.05 VGE = 3.7V 1.00 VGE = 4.0V
Figure 2. Self Clamped Inductive Switching Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.25 ICE = 10A 1.20 VGE = 3.7V 1.15 VGE = 4.0V
0.95
VGE = 4.5V VGE = 5.0V
1.10 VGE = 4.5V VGE = 5.0V 1.05 VGE = 8.0V
0.90
VGE = 8.0V
0.85 -50
-25
0
25
50
75
100
125
150
175
1.00 -50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 50 VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V 30 VGE = 3.7V
Figure 4.Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 50 VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V 30 VGE = 3.7V
20
20
10 TJ = - 40C 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10 TJ = 25C 0 1.0 2.0 3.0 4.0
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector to Emitter On-State Voltage
Figure 6. Collector Current vs Collector to Emitter On-State Voltage
(c)2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
Typical Characteristics (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 ICE, COLLECTOR TO EMITTER CURRENT (A) 50 50 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 40
30 TJ = 175C 20 TJ = 25C 10 TJ = -40C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
20
10 TJ = 175C 0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs Collector Current
50 ICE, DC COLLECTOR CURRENT (A) VGE = 4.0V 40 VTH, THRESHOLD VOLTAGE (V) 2.0
Figure 8. Transfer Characteristics
VCE = VGE ICE = 1mA
1.8
30
1.6
20
1.4
10
1.2
0 25 50 75 100 125 150 175
1.0 -50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 9. DC Collector Current vs Case Temperature
10000 VECS = 24V LEAKAGE CURRENT (A) 1000 SWITCHING TIME (S)
Figure 10. Threshold Voltage vs Junction Temperature
20 18 16 14 Inductive tOFF 12 10 8 6 Resistive tON 4 ICE = 6.5A, VGE = 5V, RG = 1K Resistive tOFF
100 VCES = 300V 10 VCES = 250V 1
0.1
-50
-25
0
25
50
75
100
125
150
175
2 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 11. Leakage Current vs Junction Temperature
Figure 12. Switching Time vs Junction Temperature
(c)2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
Typical Characteristics (Continued)
3000 VGE, GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1 MHz 2500 C, CAPACITANCE (pF) 8 IG(REF) = 1mA, RL = 0.6, TJ = 25C 7 6 5 VCE = 12V 4 3 2 1 0 VCE = 6V
2000 CIES 1500
1000 CRES 500 COES 0 0 5 10 15 20 25
0
10
20
30
40
50
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter Voltage
360 ICER = 10mA BVCER, BREAKDOWN VOLTAGE (V) 358 356 354 TJ = 175C 352 350 348 346 344 342 340 10 100 TJ = 25C
Figure 14. Gate Charge
TJ = - 40C
1000
2000
3000
RG, SERIES GATE RESISTANCE (k)
Figure 15. Breakdown Voltage vs Series Gate Resistance
ZthJC, NORMALIZED THERMAL RESPONSE
100
0.5 0.2
10-1
0.1 0.05 0.02
t1 PD t2
10-2
0.01
10-3 SINGLE PULSE
DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
10-4 10-6
10-5
10-4
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
(c)2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
Test Circuits and Waveforms
L VCE R or L C RG = 1K 5V E E G + LOAD
C RG DUT G
PULSE GEN
DUT
VCE
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG -
BVCES
VCE VDD
+
VDD
IAS 0.01
0 tAV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
(c)2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3
SPICE Thermal Model
REV 1 May 2002 ISL9V5036S3ST / ISL9V3536P3 / ISL9V5036S3 CTHERM1 th 6 4.0e2 CTHERM2 6 5 3.6e-3 CTHERM3 5 4 4.9e-2 CTHERM4 4 3 3.2e-1 CTHERM5 3 2 3.0e-1 CTHERM6 2 tl 1.6e-2 RTHERM1 th 6 1.0e-2 RTHERM2 6 5 1.4e-1 RTHERM3 5 4 1.0e-1 RTHERM4 4 3 9.0e-2 RTHERM5 3 2 9.4e-2 RTHERM6 2 tl 1.9e-2
th
JUNCTION
RTHERM1
CTHERM1
6
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 4.0e2 ctherm.ctherm2 6 5 = 3.6e-3 ctherm.ctherm3 5 4 = 4.9e-2 ctherm.ctherm4 4 3 = 3.2e-1 ctherm.ctherm5 3 2 = 3.0e-1 ctherm.ctherm6 2 tl = 1.6e-2 rtherm.rtherm1 th 6 = 1.0e-2 rtherm.rtherm2 6 5 = 1.4e-1 rtherm.rtherm3 5 4 = 1.0e-1 rtherm.rtherm4 4 3 = 9.0e-2 rtherm.rtherm5 3 2 = 9.4e-2 rtherm.rtherm6 2 tl = 1.9e-2 }
RTHERM3 CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
(c)2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13

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